Memory mapping using commands to transfer data and/or perform logic operations

ABSTRACT

Apparatuses and methods related to commands to transfer data and/or perform logic operations are described. For example, a command that identifies a location of data and a target for transferring the data may be issued to a memory device. Or a command that identifies a location of data and one or more logic operations to be performed on that data may be issued to a memory device. A memory module may include different memory arrays (e.g., different technology types), and a command may identify data to be transferred between arrays or between controllers for the arrays. Commands may include targets for data expressed in or indicative of channels associated with the arrays, and data may be transferred between channels or between memory devices that share a channel, or both. Some commands may identify data, a target for the data, and a logic operation for the data.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.16/289,866, filed Mar. 1, 2019, which issues as U.S. Pat. No. 10,901,734on Jan. 26, 2021, the contents of which are included herein byreference.

TECHNICAL FIELD

The present disclosure relates generally to memory devices, and moreparticularly, to apparatuses and methods for memory mapping.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its data andincludes random-access memory (RAM), dynamic random access memory(DRAM), and synchronous dynamic random access memory (SDRAM), amongothers. Non-volatile memory can provide persistent data by retainingstored data when not powered and can include NAND flash memory, NORflash memory, read only memory (ROM), Electrically Erasable ProgrammableROM (EEPROM), Erasable Programmable ROM (EPROM), and resistance variablememory such as phase change random access memory (PCRAM), resistiverandom access memory (RRAM), and magnetoresistive random access memory(MRAM), among others.

Memory is also utilized as volatile and non-volatile data storage for awide range of electronic applications. Non-volatile memory may be usedin, for example, personal computers, portable memory sticks, digitalcameras, cellular telephones, portable music players such as MP3players, movie players, and other electronic devices. Memory cells canbe arranged into arrays, with the arrays being used in memory devices.

Memory can be part of a memory module (e.g., a dual in-line memorymodule (DIMM)) used in computing devices. Memory modules can includevolatile, such as DRAM, for example, and/or non-volatile memory, such asFlash memory or RRAM, for example. The DIMMs can be using a main memoryin computing systems.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a block diagram of an apparatus in the form of a computingsystem including a memory apparatus in accordance with a number ofembodiments of the present disclosure.

FIG. 1B is a block diagram of a non-volatile DIMM (NVDIMM) of a memoryapparatus in accordance with a number of embodiments of the presentdisclosure.

FIG. 2 is a block diagram of a computing system including a host and amemory system comprising a dual in-line memory module (DIMM) with aready/busy bus in accordance with a number of embodiments of the presentdisclosure.

FIG. 3A is a block diagram of a command to transfer data in accordancewith a number of embodiments of the present disclosure.

FIG. 3B is a block diagram of a command to perform logic operations inaccordance with a number of embodiments of the present disclosure.

FIG. 4 is a flow diagram illustrating an example process includingcommands in accordance with a number of embodiments of the presentdisclosure.

FIG. 5 is a flow diagram illustrating an example process includingcommands in accordance with a number of embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods related to amemory apparatus and/or method for memory mapping using commands totransfer data and/or perform logic operations. A dual in-line memorymodule (DIMM), for example, can receive commands (e.g., memory mappedcommands). The commands can include instructions to transfer databetween memory devices and/or channels on the DIMM. The commands caninclude a first portion that identifies a location (e.g., address) ofthe data to be transferred. The commands can include a second portionthat identifies a location of where the data is to be transferred. Thelocation in the second portion of the commands can include a channel, acontroller, and/or an address in a memory device on the DIMM.

In a number of embodiments, the commands can include instructions totransfer data on the DIMM. The commands can include instructions totransfer data between memory devices on a DIMM. For example, thecommands can include instructions to transfer data from a volatilememory device to a non-volatile memory device on a common channel, froma volatile memory device to a volatile memory device on a commonchannel, and/or from a non-volatile memory device to a non-volatilememory device on a common channel. The data can be transferred betweenmemory devices via a controller on the common channel.

The commands can include instructions to transfer data between channelson a DIMM. For example, the memory mapped commands can includeinstructions to transfer data from a memory device on a first channel toa controller and/or memory device on a second channel. The commands caninclude instructions to transfer data from a volatile memory device onfirst channel to a non-volatile memory device on a second channel, froma volatile memory device on a first channel to a volatile memory deviceon a second channel, and/or from a non-volatile memory device on a firstchannel to a non-volatile memory device on a second channel. The datacan be transferred between memory devices on different channels viacontrollers on each channel. The commands can also include instructionsto transfer data between controllers on different channels. For example,a controller on a first channel can be coupled to a controller on asecond channel and the commands can include instructions to transferdata from the controller on the first channel to the controller on thesecond channel.

In a number of embodiments, the commands can include instructions toperform logic operation on data in the DIMM. The commands can includeinstructions to perform logic operations on data. The logic operationscan be performed on a controller. The controllers can include anapplication specific integrated circuit (ASIC), a field programmablegate array (FPGA), and/or an arithmetic logic unit (ALU), among othertypes of software, hardware, and or firmware, to perform the logicoperations. The commands can include instructions to transfer data thathas been modified by logic operations between memory devices,controllers, and/or channels on the DIMM.

An example apparatus can include a first memory device and a secondmemory device coupled to a first controller on a first channel and athird memory device and a fourth memory device coupled to a secondcontroller on a second channel. The first controller can be coupled tothe second controller and the second controller can be configured toreceive a command to transfer data from the third memory device, whereinthe command includes a first portion that identifies a first location inthe third memory device of the data and a second portion that identifiesa second location where the data is to be transferred. The secondcontroller can be configured to transfer the data from the location inthe third memory device to the second location in response receiving thecommand.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how a number of embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, the designator “N” indicatesthat a number of the particular feature so designated can be includedwith a number of embodiments of the present disclosure.

As used herein, “a number of” something can refer to one or more of suchthings. For example, a number of memory devices can refer to one or moreof memory devices. Additionally, designators such as “N”, as usedherein, particularly with respect to reference numerals in the drawings,indicates that a number of the particular feature so designated can beincluded with a number of embodiments of the present disclosure.

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. As will be appreciated,elements shown in the various embodiments herein can be added,exchanged, and/or eliminated so as to provide a number of additionalembodiments of the present disclosure. In addition, the proportion andthe relative scale of the elements provided in the figures are intendedto illustrate various embodiments of the present disclosure and are notto be used in a limiting sense.

FIG. 1A is a functional block diagram of a computing system 100including an apparatus in the form of a number of memory systems 104-1 .. . 104-N, in accordance with one or more embodiments of the presentdisclosure. As used herein, an “apparatus” can refer to, but is notlimited to, any of a variety of structures or combinations ofstructures, such as a circuit or circuitry, a die or dice, a module ormodules, a device or devices, or a system or systems, for example. Inthe embodiment illustrated in FIG. 1A, memory systems 104-1 . . . 104-Ncan include a one or more dual in-line memory modules (DIMM) 110-1, . .. , 110-X, 110-Y. The DIMMs 110-1, . . . , 110-X, 110-Y can includevolatile memory and/or non-volatile memory. In a number of embodiments,memory systems 104-1, . . . , 104-N can include a multi-chip device. Amulti-chip device can include a number of different memory types and/ormemory modules. For example, a memory system can include non-volatile orvolatile memory on any type of a module. The examples described below inassociation with FIGS. 1A-5 can use a DIMM as the memory module, but theembodiments of the present disclosure can be used on any memory systemthat include volatile and/or non-volatile memory. In FIG. 1A, memorysystem 104-1 is coupled to the host via channel 103-1 can include DIMMs110-1, . . . , 110-X, where DIMM 110-1 is a NVDIMM and 110-X is DRAMDIMM. In this example, each DIMM 110-1, . . . , 110-X, 110-Y includes acontroller 114. Controller 114 can receive commands from host 102 andcontrol execution of the commands on a DIMM. Also, in a number ofembodiments, the protocol of the present disclosure could be implementedby a memory device (e.g., a DIMM) without a controller and execution ofthe commands using the protocol of the present disclosure could be builtinto the memory device. The host 102 can send commands to the DIMMs110-1, . . . , 110-X, 110-Y using the protocol of the present disclosureand/or a prior protocol, depending on the type of memory in the DIMM.For example, the host can use the protocol of the present disclosure tocommunicate on the same channel (e.g., channel 103-1) with a NVDIMM anda prior protocol to communicate with a DRAM DIMM that are both on thesame memory system 104.

As illustrated in FIG. 1A, a host 102 can be coupled to the memorysystems 104-1 . . . 104-N. In a number of embodiments, each memorysystem 104-1 . . . 104-N can be coupled to host 102 via a channel (e.g.,channels 103-1, . . . , 103-N). In FIG. 1A, memory system 104-1 iscoupled to host 102 via channel 103-1 and memory system 104-N is coupledto host 102 via channel 103-N. Host 102 can be a laptop computer,personal computers, digital camera, digital recording and playbackdevice, mobile telephone, PDA, memory card reader, interface hub, amongother host systems, and can include a memory access device, e.g., aprocessor. One of ordinary skill in the art will appreciate that “aprocessor” can intend one or more processors, such as a parallelprocessing system, a number of coprocessors, etc.

Host 102 includes a host controller 108 to communicate with memorysystems 104-1 . . . 104-N. The host controller 108 can send commands tothe DIMMs 110-1, . . . , 110-X, 110-Y via channels 103-1 . . . 103-N.The host controller 108 can communicate with the DIMMs 110-1, . . . ,110-X, 110-Y and/or the controller 114 on each of the DIMMs 110-1, . . ., 110-X, 110-Y to read, write, and erase data, among other operations. Aphysical host interface can provide an interface for passing control,address, data, and other signals between the memory systems 104-1 . . .104-N and host 102 having compatible receptors for the physical hostinterface. The signals can be communicated between 102 and DIMMs 110-1,. . . , 110-X, 110-Y on a number of buses, such as a data bus and/or anaddress bus, for example, via channels 103-1 . . . 103-N.

The host controller 108 and/or controller 114 on a DIMM can includecontrol circuitry, e.g., hardware, firmware, and/or software. In one ormore embodiments, the host controller 108 and/or controller 114 can bean application specific integrated circuit (ASIC) and/or a fieldprogrammable gate array (FPGA) coupled to a printed circuit boardincluding a physical interface. Also, each DIMM 110-1, . . . , 110-X,110-Y can include buffers 106 of volatile and/or non-volatile memory andregisters 107. Buffer 106 can be used to buffer data that is used duringexecution of commands. Controller 114 can include an applicationspecific integrated circuit (ASIC), a field programmable gate array(FPGA), and/or an arithmetic logic unit (ALU), among other types ofsoftware, hardware, and or firmware, to perform the logic operationsbased on the instruction in commands.

The DIMMs 110-1, . . . , 110-X, 110-Y can provide main memory for thememory system or could be used as additional memory or storagethroughout the memory system. Each DIMM 110-1, . . . , 110-X, 110-Y caninclude one or more arrays of memory cells on memory dies, e.g.,volatile and/or non-volatile memory cells. The arrays can be flasharrays with a NAND architecture, for example. Embodiments are notlimited to a particular type of memory device. For instance, the memorydevice can include RAM, ROM, DRAM, SDRAM, PCRAM, RRAM, and flash memory,among others.

The embodiment of FIG. 1A can include additional circuitry that is notillustrated so as not to obscure embodiments of the present disclosure.For example, the memory systems 104-1 . . . 104-N can include addresscircuitry to latch address signals provided over I/O connections throughI/O circuitry. Address signals can be received and decoded by a rowdecoder and a column decoder to access the DIMMs 110-1, . . . , 110-X,110-Y. It will be appreciated by those skilled in the art that thenumber of address input connections can depend on the density andarchitecture of the DIMMs 110-1, . . . , 110-X, 110-Y.

FIG. 1B is a block diagram of an apparatus in the form of a dual in-linememory modules (DIMM) 110 in accordance with a number of embodiments ofthe present disclosure. In FIG. 1B, DIMM 110 can include a controller114. Controller 114 can include memory, such as SRAM memory, that can bea buffer 106 and/or a number of registers 107. DIMM 110 can include anumber of memory devices 105-1, . . . , 105-Z coupled to the controller.Memory devices 105-1, . . . , 105-Z can be volatile and/or non-volatilememory devices, such as memory devices 221 and 224 in FIG. 2, andinclude non-volatile memory arrays and/or volatile memory arrays. Memorydevices 105-1, . . . , 105-Z can include control circuitry 109 (e.g.,hardware, firmware, and/or software) which can be used to executecommands on the memory devices 105-1, . . . , 105-Z. The controlcircuitry 109 can receive commands from controller 114. The controlcircuitry 109 can be configured to execute commands to read and/or writedata in the memory devices 105-1, . . . , 105-Z.

FIG. 2 is a block diagram of a computing system 200 including a host 202and a memory system comprising a dual in-line memory module (DIMM) 210with a first and second controller and a first and second ready/busy busin accordance with a number of embodiments of the present disclosure. InFIG. 2, host 202 is coupled to DIMM 210 via data buses 212-1, . . . ,212-8, command/address buses 218-1 and 218-2, and ready/busy buses 227-1and 227-2. Host 202 can be coupled to DIMM 210 via a number of channels(e.g., channels 103-1, . . . , 103-N in FIG. 1A). For example, host 202is coupled to DIMM 210 via a first channel (e.g., channel 103-1 in FIG.1A) that includes memory devices 221-1, . . . , 221-4 and 224-1, . . . ,224-4 coupled via data buses 212-1, . . . , 212-4, command/address bus218-1, and ready/busy bus 227-1; and host 202 is coupled to DIMM 210 viaa second channel (e.g., channel 103-1 in FIG. 1A) that includes memorydevices 221-5, . . . , 221-8 and 224-5, . . . , 224-8 coupled via databuses 212-5, . . . , 212-8, command address/bus 218-2, and ready/busybus 227-2. Controller 214-1 can receive commands from host 202 onchannel 1 and controller 214-2 can receive commands from host 202 onchannel 2. The commands from host 202 can be sent to register clockdriver (RCD) 217 via buses 218-1 and/or 218-2 and the commands can besent from RCD 217 to controller 214-1 via bus 219-1 and controller 214-2via bus 219-2.

DIMM 210 can include controller 214-1 and 214-2. Controller 214-1 can becoupled to and send signals to control operation of memory devices221-1, . . . , 221-4 and memory devices 224-1, . . . , 224-4. Controller214-2 can be coupled to and send signals to control operation of memorydevices 221-5, . . . , 221-8 and memory devices 224-5, . . . , 224-8.DIMM 210 with controllers 214-1 and 214-2 can allow memory devices221-1, . . . , 221-4 and memory devices 224-1, . . . , 224-4 to operateindependently from memory devices 221-5, . . . , 221-8 and memorydevices 224-5, . . . , 224-8. Controller 214-1 is coupled to controller214-2 and data can be transferred between controller 214-1 and 214-2.Therefore controller 214-1 can operate memory devices 221-1, . . . ,221-4 and memory devices 224-1, . . . , 224-4 independently from othermemory device and also transfer data from memory devices 221-1, . . . ,221-4 and memory devices 224-1, . . . , 224-4 to other memory devices,such as memory devices 221-5, . . . , 421-8 and memory devices 224-5, .. . , 224-8.

In a number of embodiments, DIMM 210 can receive commands (e.g., memorymapped commands). The commands can include instructions to transfer databetween memory devices 221-1, . . . , 221-8 and 224-1, . . . , 224-8and/or channels on the DIMM. The commands can include a first portionthat identifies a location (e.g., address) of the data in memory devices221-1, . . . , 221-8 and 224-1, . . . , 224-8 to be transferred (e.g.,an origin). The commands can include a second portion that identifies alocation of where the data is to be transferred (e.g., a destination).The location in the second portion of the commands can include achannel, a controller 214-1 and 214-2, and/or an address in memorydevice memory devices 221-1, . . . , 221-8 and 224-1, . . . , 224-8 onthe DIMM.

The commands can include instructions to transfer data between memorydevices memory devices 221-1, . . . , 221-8 and 224-1, . . . , 224-8 onDIMM 210. For example, the commands can include instructions to transferdata from memory devices 221-1, . . . , 221-4 to memory devices 224-1, .. . , 224-4 on a first channel, from memory devices 221-1, . . . , 221-4to memory devices 221-1, . . . , 221-4 on a first channel, and/or frommemory devices 224-1, . . . , 224-4 to memory devices 224-1, . . . ,224-4 on a first channel, or from memory devices 224-1, . . . , 224-4 tomemory devices 221-1, . . . , 221-4 on a first channel. The data can betransferred between memory devices via controller 214-1 on the firstchannel.

The commands can include instructions to transfer data between channelson a DIMM. The commands can include instructions to transfer data from amemory device on a first channel to a controller and/or memory device ona second channel. For example, the commands can include instructions totransfer data from memory devices 221-1, . . . , 221-4 on first channelto memory devices 224-5, . . . , 224-8 on a second channel, from memorydevices 221-1, . . . , 221-4 on a first channel to memory devices 221-5,. . . , 221-8 on a second channel, and/or from memory devices 224-1, . .. , 224-4 on a first channel to memory devices 224-5, . . . , 224-8 on asecond channel. The data can be transferred between memory devices ondifferent channels via controllers 214-1 and 214-2. The commands canalso include instructions to transfer data between controllers 214-1 and214-2. For example, controller 214-1 on a first channel can be coupledto controller 214-2 on a second channel and the commands can includeinstructions to transfer data from controller 214-1 on the first channelto the controller 214-2 on the second channel.

In a number of embodiments, the commands can include instructions toperform logic operation on data in the DIMM 210. The commands caninclude instructions to perform logic operations on data stored in DIMM210. The logic operations can be performed on controllers 214-1 and214-2. Controllers 214-1 and 214-2 include logic 211 that can include anapplication specific integrated circuit (ASIC), a field programmablegate array (FPGA), and/or an arithmetic logic unit (ALU), among othertypes of software, hardware, and or firmware, to perform the logicoperations. The commands can include instructions to transfer data thathas been modified by logic operations between memory devices 221-1, . .. , 221-8 and 224-1, . . . , 224-8, controllers 214-1 and 214-2, and/orchannels on the DIMM 210.

DIMM 210 can include a first number of memory devices 221-1, . . . ,221-8. For example, memory devices 221-1, . . . , 221-8 can be DRAMmemory devices, among other types of volatile and/or non-volatilememory. DIMM 210 can include a second number of memory devices 224-1, .. . , 224-8. For example, memory devices 221-1, . . . , 221-8 can be 3DXPoint memory devices, among other types of volatile and/or non-volatilememory.

Controllers 214-1 and 214-2 can send a ready/busy signal to host 202 onthe ready/busy buses 227-1 and 224-2, respectively. The ready/busysignal can indicate to host 202 whether or not the controller 214-1and/or 214-2 is ready to receive commands from host 202. For example, ifcontroller 214-1 on DIMM 210 is busy executing commands, such astransferring data between memory devices 221-1, . . . , 221-4 and memorydevices 224-1, . . . , 224-4, the controller 214-1 is not ready toreceive commands on channel 1, but controller 214-2 could receivecommands on channel 2. A ready/busy signal can be sent by controller214-1 on ready/busy bus 227-1 to host 202 that indicates controller214-1 is not ready to receive commands on channel 1 and a ready/busysignal can be sent by controller 214-2 on ready/busy bus 227-2 to hostindicating controller 214-2 is ready to receive command from host 202 onchannel 2. Host 202 can send commands on the second channel tocontroller 214-2 for execution on memory device 221-5, . . . , 221-8and/or memory devices 224-5, . . . , 224-8. Once controller 214-1 is nolonger busy executing commands, such as commands that transfer data onmemory device associated with channel 1, controller 214-1 can send aready/busy signal on ready/busy bus 227-1 to host 202 indicatingcontroller 214-1 is ready to receive commands from host 202 onchannel 1. Host 202 can send commands to controller 214-1 on channel 1in response to receiving the ready/busy signal.

Controllers 214-1 and 214-2 can receive commands from host 202, such ascommands. The commands from host 202 can be sent to register clockdriver (RCD) 217 via buses 218-1 and/or 218-2 and the commands can besent from RCD 217 to controllers 214-1 and 214-2 via buses 219-1 and/or219-2, respectively. Controllers 214-1 and 214-2 can receive thecommands from RCD 217 and store data associated with the commands (e.g.,command instructions and/or data read from and/or to be written tomemory devices 221 and/or 224 during execution of the commands) inbuffer 206. Controllers 214-1 and 214-2 can send the commands to memorydevices 221-1, . . . , 221-8 on bus 225-1 and/or 225-2 via RCD 217 andmemory devices 221-1, . . . , 221-8 can execute the commands bytransferring data between memory devices 221-1, . . . , 221-8 and host202 and/or memory devices 221-1, . . . , 221-8 and memory device 224-1,. . . , 224-8. Memory devices 221-1, . . . , 221-8 can send signals onbuses 225-1 and 225-2 to RCD 217 and controllers 214-1 and 214-2 thatindicate memory devices 221-1, . . . , 221-8 have completed execution ofcommands and are ready for additional commands. Once a command has beenexecuted, controllers 214-1 and 214-2 can send a status signal to thehost 202 indicating that the command received from host 202 has beenexecuted. Controllers 214-1 and 214-2 can include non-volatile and/orvolatile memory, such as SRAM memory, that can be a buffer 206 and/or aregister 207 used during execution of commands.

Memory system 200 can be configured to execute commands sent from host202 to DIMM 210 by sending command/address information from the hostcontroller 208 on command/address bus 218 to the register clock driver(RCD) 217 and data on data buses 212-1, . . . , 212-8. The commands fromthe host can include address information for memory devices 221-1, . . .221-8 where the host is requesting an operation on data at particularlocation in memory devices 221-1, . . . 221-8. The commands from thehost can include address information for memory devices 224-1, . . . ,224-4 where the host is requesting an operation on data at particularlocation in memory devices 224-1, . . . , 224-4, while memory devices221-2, . . . 221-8 can act as a buffer during execution of the commands.

In a number of embodiments, memory devices 221-1, . . . 221-8 can beconfigured as cache. For example, memory devices can be configured ascache for the data stored in memory devices 224-1, . . . , 224-8 and/orother memory devices coupled to the computing system. The DIMM 210 canbe configured to have a portion of memory devices 221-1, . . . 221-8addressable by host 202 and a portion of the memory devices 221-1, . . .221-8 configured as cache.

In a number of embodiments, commands can be received from host 202and/or generated by controllers 214-1 and 214-2 to transfer data betweenmemory devices 224-1, . . . , 224-8. Data can be transferred betweenmemory devices 224-1, . . . , 224-8 via controllers 214-1 and 214-2using buffers 206 and/or registers 207.

FIG. 3A is a block diagram of a command 340 to transfer data inaccordance with a number of embodiments of the present disclosure.Command 340 can include an origin 342 of the data that is to betransferred during execution of the command. Origin 342 can include anaddress of the data in a memory device on a DIMM. Origin 342 can alsoinclude a location on a controller, such as data stored in a registerand/or buffer on a controller. Command 340 can include a destination 344for data during execution of the command. Destination 344 can be amemory device and/or a controller, among other location on a DIMM.Destination 344 of the command can include an address of a memory deviceon the DIMM.

FIG. 3B is a block diagram of a command to perform logic operations inaccordance with a number of embodiments of the present disclosure.Command 346 can include instructions 348 for performing logic operationson data. Instructions 348 can be executed by a controller. Command 346can include a destination 344 for data that was manipulated by the logicoperations. Destination 344 can be a memory device and/or a controller,among other location on a DIMM. Destination 344 of the command caninclude an address of a memory device on the DIMM.

FIG. 4 is a flow diagram illustrating an example process includingcommands in accordance with a number of embodiments of the presentdisclosure. The process described in FIG. 4 can be performed by, forexample, a memory system including a NVDIMM such as DIMM 210 shown inFIG. 2.

At block 450, the process can include receiving a command to transferdata from a first memory device on a first channel to a second channel,wherein the command includes a first portion that identifies a locationof the data in the first memory device and a second portion thatidentifies a second location on the second channel where the data is tobe transferred.

At block 452, the process can include transferring the data from thelocation in the first memory device to the second channel in responsereceiving the command.

FIG. 5 is a flow diagram illustrating an example process includingcommands in accordance with a number of embodiments of the presentdisclosure. The process described in FIG. 5 can be performed by, forexample, a memory system including a NVDIMM such as DIMM 210 shown inFIG. 2.

At block 560, the process can include receive a first command, wherein afirst portion of the first command identifies a portion of data in amemory device and a second portion of the first command includesinstructions for a logic operation to be performed on the data.

At block 562, the process can include performing the logic operations onthe data based on the instructions in the second portion of the firstcommand.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of various embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the various embodiments ofthe present disclosure includes other applications in which the abovestructures and methods are used. Therefore, the scope of variousembodiments of the present disclosure should be determined withreference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Ifimplemented in software executed by a processor, the functions may bestored on or transmitted over as one or more instructions or code on acomputer-readable medium. Other examples and implementations are withinthe scope of the disclosure and appended claims. For example, due to thenature of software, functions described herein can be implemented usingsoftware executed by a processor, hardware, firmware, hardwiring, orcombinations of any of these. Features implementing functions may alsobe physically located at various positions, including being distributedsuch that portions of functions are implemented at different physicallocations.

Also, as used herein, including in the claims, “or” as used in a list ofitems (for example, a list of items prefaced by a phrase such as “atleast one of or” “one or more of”) indicates an inclusive list suchthat, for example, a list of at least one of A, B, or C means A or B orC or AB or AC or BC or ABC (i.e., A and B and C). For the avoidance ofdoubt, a list of at least one of A, B, or C, or any combination thereofis likewise an inclusive list. Also, as used herein, the phrase “basedon” shall not be construed as a reference to a closed set of conditions.For example, an exemplary step that is described as “based on conditionA” may be based on both a condition A and a condition B withoutdeparting from the scope of the present disclosure. In other words, asused herein, the phrase “based on” shall be construed in the same manneras the phrase “based at least in part on.”

In the foregoing Detailed Description, various features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. An apparatus, comprising: a first memory deviceand a second memory device coupled to a first controller, wherein thefirst controller is configured to: receive a first command to transferdata from the first memory device, wherein the first command includes afirst portion that identifies a first location in the first memorydevice of the data and wherein the first command includes a secondportion that identifies a second location where the data is to betransferred; transfer the data from the location in the first memorydevice to the second location in response receiving the command; receivea second command with instructions to perform logic operations on thedata and to transfer the data to a second controller coupled to thefirst controller; and perform the logic operations on the data andtransfer the data to the second controller.
 2. The apparatus of claim 1,wherein the second location is the first controller.
 3. The apparatus ofclaim 1, wherein the first command includes instructions to transfer thedata to the first controller.
 4. The apparatus of claim 3, wherein thefirst command includes instructions to transfer the data modified by thelogic operations from the first controller to the second memory device.5. The apparatus of claim 1, wherein the second controller is configuredto receive a third command with instructions to perform additional logicoperations on the data.
 6. The apparatus of claim 5, wherein the thirdcommand includes instructions to transfer the data modified by theadditional logic operations to the first controller.
 7. The apparatus ofclaim 1, wherein the first memory device is a non-volatile memory (NVM)device and the second memory device is a volatile memory (VM) device. 8.An apparatus, comprising: a first memory device and a second memorydevice coupled to a first controller, wherein the first controller isconfigured to: receive a first command to transfer data from the firstmemory device, wherein the first command includes a first portion thatidentifies a first location in the first memory device of the data and asecond portion that includes instructions for a logic operation to beperformed on the data; transfer the data from the location in the firstmemory device to the first controller in response receiving the firstcommand; perform the logic operation on the data; transfer the datamodified by the logic operation to the second memory device; receive asecond command with instructions to perform additional logic operationson the data modified by the logic operation; perform the additionallogic operations on the data modified by the logic operation; andtransfer the data modified by the additional logic operations to thesecond memory device.
 9. The apparatus of claim 8, wherein the firstcommand includes instructions to transfer the data modified by the logicoperation to the second memory device.
 10. The apparatus of claim 8,wherein the second command includes instructions to store the datamodified by the additional logic operations in the second memory device.11. The apparatus of claim 8, wherein apparatus is a dual in-line memorymodule (DIMM), the first memory device is a non-volatile memory (NVM)device, and the second memory device is a volatile memory (VM) device.12. The apparatus of claim 8, wherein the first controller includes afield programmable gate array (FPGA) configured to perform logicoperations.
 13. A method, comprising: receiving a first command totransfer data from a first memory device to a first controller, performlogic operations on the data with the first controller, and transfer thedata modified by the logic operations to a second memory device, whereinthe first command includes a first portion that identifies a location ofthe data in the first memory device and a second portion that identifiesa second location on the second memory device where the data modified bythe logic operations is to be transferred; transferring the data fromthe location in the first memory device to the first controller inresponse receiving the first command; performing the logic operations onthe data with the first controller; and transferring the data modifiedby the logic operations to the location in the second memory device. 14.The method of claim 13, further including receiving a second commandwith instructions to perform additional logic operations with the firstcontroller on the data modified by the logic operations.
 15. The methodof claim 14, wherein the second command includes instructions totransfer the data modified by the additional logic operations to thesecond memory device.
 16. The method of claim 14, further includingperforming additional logic operations on the data modified by the logicoperations and transferring the data modified by the additional logicoperations to a third location on the second memory device.
 17. Themethod of claim 16, wherein further including storing the data modifiedby the logic operations on the second memory device.